A common problem in Magnetic Resonance Force Microscopy (MRFM) is the spin-induced damping of the cantilever, which drastically limits the sensitivity to spin signals. In order to solve this...Show moreA common problem in Magnetic Resonance Force Microscopy (MRFM) is the spin-induced damping of the cantilever, which drastically limits the sensitivity to spin signals. In order to solve this problem, we have developed improvements to a Persistent Current Switch (PCS) that make it less dissipative and capable of creating a stronger magnetic field at the sample. On top of this, the low noise level that our detection setup requires is conserved. The improvements are based on the use of a low-temperature magnetic core material called MetGlas [1]. We have measured the full B-H curve of the MetGlas and verified that it decreases the current required to switch a Niobium wire to the resistive state by a factor of 30. Furthermore, we have used this data to calculate the performance of a transformer made using this material, and we have calculated the expected extremely low noise level that this circuit will cause in our SQUID.Show less
In this thesis, we have worked on devices for two oxide systems, with which spin-polarized currents could in future be controlled. Firstly, we have worked on the optimization of growth parameters...Show moreIn this thesis, we have worked on devices for two oxide systems, with which spin-polarized currents could in future be controlled. Firstly, we have worked on the optimization of growth parameters for the depositions of La0.7Sr0.3MnO3 thin-films in off-axis sputtering. We have characterized the grown films using Atomic Force Microscopy, X-Ray Diffraction and resistance measurements. La0.7Sr0.3MnO3 is a ferromagnetic oxide, which we believe could be used in conjunction with the oxide superconductor Sr2RuO4 to induce polarized supercurrents. Further, we illustrate a lithography procedure which allows for the patterning of LSMO films into Hall bar structures. Next, we have designed a side-gated Hall bar pattern for LaAlO3/EuTiO3/SrTiO3 devices. This system has been shown to give rise to a spin-polarized two dimensional electron gas [1]. Our structure is designed to allow for local control of this spin-polarization.Show less
