The electronic properties of graphene on silicon carbide have opened up a wide variety of technological applications. During the growth of this graphene, thermal contraction causes strain between...Show moreThe electronic properties of graphene on silicon carbide have opened up a wide variety of technological applications. During the growth of this graphene, thermal contraction causes strain between the graphene layers. This strain induces domains of different crystallographic stacking which influence the electronic properties. The shape and geometry of those domains are given by the local strain and can be seen on images obtained with low-energy electron microscopy. In this research, we extract strain maps from these images to gain more understanding about what drives the formation of these stacking domains. We find that the substrate step edges affect the shape of the domains and therefore provide new parameters to be used for strain engineering.Show less
