We characterized an alternatively designed, low-cost “electron bombarding based” silicon L-shell radiation source, to be applied for metrology in the Extreme Ultra Violet Lithography process. The...Show moreWe characterized an alternatively designed, low-cost “electron bombarding based” silicon L-shell radiation source, to be applied for metrology in the Extreme Ultra Violet Lithography process. The design of the source enables adjustable focusing of the electrons on the target. A transmission grating spectrometer as well as a silicon drift detector were used to determine the radiation spectrum. In our electron-based source, we found that the maximum source power input was 80 W. Experiments with the grating spectrometer showed that for electrons with an energy of 5 kV, the source produced a power of 2 * 10^(-6) W/sr and the conversion efficiency amounts to 8 * 10^(-8)/sr for radiation around 13.5 nm. Regarding spectrum detection, the sensitivity of the silicon drift detector appeared too low to measure the silicon L peak. A decreased signal of silicon L-shell radiation was observed associated with the growing of carbon K peak.Show less
Changes in thin film morphology and their underlying processes can prove important for the performance of future extreme ultraviolet (EUV) optics. A ruthenium coated diffraction grating was...Show moreChanges in thin film morphology and their underlying processes can prove important for the performance of future extreme ultraviolet (EUV) optics. A ruthenium coated diffraction grating was inspected using atomic force microscopy (AFM) prior to and after exposure to high intensity EUV light under a grazing incident angle, in order to determine whether such change occurs due to EUV irradiation. AFM images show signs of structural change, most noticeable at the bottom of the grating, possibly caused by heating through absorption of the EUV radiation. Closer study of the top grating section showed signs of a change in thin film morphology as well. We used statistical and dynamic scaling analysis of multiple AFM images to verify this hypothesis, but it could not confirm this change beyond doubt, nor dismiss the claims outright. Possible explanations for a change in thin film morphology were proposed, such as thermally assisted diffusion causing roughening and coarsening, as well as oxidation of the layer.Show less
This report concerns the creation of a machine that creates graphene using chemical vapor deposition. This machine is a ultra high vacuum device, where high quality graphene is created on top of a...Show moreThis report concerns the creation of a machine that creates graphene using chemical vapor deposition. This machine is a ultra high vacuum device, where high quality graphene is created on top of a single chrystal copper substrate. Additionally an analysis of substrate motility and graphene stretching is presented.Show less
During this study, a device was developed which is capable of measuring the friction coefficient between two macroscopic solid samples for different rotation angles. It is based on an Anton Paar...Show moreDuring this study, a device was developed which is capable of measuring the friction coefficient between two macroscopic solid samples for different rotation angles. It is based on an Anton Paar rheometer. It can measure torques ranging from 10 nNm up to 200 mNm, while controlling the rotation angle with a minimum resolution of 10 nrad. The normal load exerted on the samples can be controlled with mN accuracy. Measurements on HOPG and silicon dioxide have verified that the instrument works and is capable of measuring very low friction coefficients as a function of the rotation angle between the two samples. The obtained friction coefficients are in agreement with values found in literature.Show less
