In this study we investigate if we can change the interfacial conductivity in LaAlO3/SrTiO3 heterostructures by adding some oxygen to the argon sputter gas. We vary the deposition parameters to...Show moreIn this study we investigate if we can change the interfacial conductivity in LaAlO3/SrTiO3 heterostructures by adding some oxygen to the argon sputter gas. We vary the deposition parameters to minimise the effect of the oxygen. We find that an increase in oxygen partial pressure increases the surface roughness. We also find that an increase in argon flow increases surface roughness. The optimised parameters, which minimise surface roughness, are in agreement with previous results of growing a conducting interface in LaAlO3/SrTiO3 by sputtering. However all our samples grown with oxygen are found to be insulating. A possible explanation for the effect of oxygen in the sputter gas is that the species oxidise before reaching the sample. We conclude that even a very small amount of oxygen in the sputter gas gives an insulating interface and that we can not make a conducting interface with oxygen in the sputter gas with the experimental set-up used.Show less
