To study high temperature superconductors with transport experiments electrical contacts that have low contact resistance to these materials are essential. For this purpose we investigate a method...Show moreTo study high temperature superconductors with transport experiments electrical contacts that have low contact resistance to these materials are essential. For this purpose we investigate a method to fabricate silver con- tacts to BSCCO micro-crystals. We obtained the lowest contact resistances for silver contacts with a gold capping layer deposited by sputtering. The quality of the samples was further confirmed by RT measurements of the micro-crystals. Additionally, we found that the quality of most samples could be improved by annealing. This gave samples with sufficiently low contact resistances for transport experiments. Lastly, we investigated the possibility to fabricate nano-devices with Focused Ion Beam for transport experiments on the strange metal phase of BSCCO.Show less
In order to curb the growing energy demand and environmental impact of data centers, breakthrough technologies bringing increased energy efficiency are required. Superconducting computing promises...Show moreIn order to curb the growing energy demand and environmental impact of data centers, breakthrough technologies bringing increased energy efficiency are required. Superconducting computing promises massive energy savings through near-dissipationless operation. So far, multiple designs for superconducting memory are proposed, but none meets all requirements for an implementable device. To this end, we propose a novel design of superconducting memory (SCM) device, using two stable magnetic spin textures in a single-layer elliptical SFS Josephson junction. We observe a change in critical current between the two states by a factor of five at remanence. Using a novel technique to quantify the effects of stray fields using micromagnetic simulations, we conclude that the shift in critical current is caused by a large contrast in stray field strength between the two magnetic states. Furthermore, we verify that the switching process is deterministic and unambiguous during read-out. Future pathways to scale up this memory device are proposed.Show less
